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1 基态几何优化:%chk=NiP_GS.chk #p opt freq=raman CAM-B3LYP/6-31+G* scrf(solvent=dichloromethane)
2 取上一步优化得到的结构:%chk=NiP_TD_CAM.chk %oldchk=NiP_GS.chk #p td(nstates=20) CAM-B3LYP/6-31+G(d) scrf=(iefpcm,solvent=dichloromethane) geom=allcheck guess=read
输出的前10个激发态信息如下,关注的是9或10
Excitation energies and oscillator strengths:
Excited State 1: Singlet-A 1.6134 eV 768.49 nm f=0.0000 <S**2>=0.000
90 -> 97 0.72134
90 <- 97 -0.17974
This state for optimization and/or second-order correction.
Total Energy, E(TD-HF/TD-DFT) = -2496.14245719
Copying the excited state density for this state as the 1-particle RhoCI density.
Excited State 2: Singlet-A 1.8596 eV 666.71 nm f=0.0000 <S**2>=0.000
84 -> 97 0.43636
85 -> 97 0.17162
92 -> 97 0.53662
Excited State 3: Singlet-A 1.8596 eV 666.71 nm f=0.0000 <S**2>=0.000
84 -> 97 -0.17162
85 -> 97 0.43636
91 -> 97 0.53662
Excited State 4: Singlet-A 2.4698 eV 502.01 nm f=0.0178 <S**2>=0.000
93 -> 95 -0.13405
93 -> 96 -0.43074
94 -> 95 0.51839
94 -> 96 -0.16141
Excited State 5: Singlet-A 2.4698 eV 502.01 nm f=0.0178 <S**2>=0.000
93 -> 95 0.43077
93 -> 96 -0.13404
94 -> 95 0.16142
94 -> 96 0.51836
Excited State 6: Singlet-A 2.5476 eV 486.67 nm f=0.0000 <S**2>=0.000
75 -> 97 -0.16968
83 -> 97 -0.68071
Excited State 7: Singlet-A 3.2775 eV 378.29 nm f=0.0000 <S**2>=0.000
88 -> 97 -0.13900
93 -> 97 0.69075
Excited State 8: Singlet-A 3.4006 eV 364.59 nm f=0.0000 <S**2>=0.000
94 -> 97 0.70641
Excited State 9: Singlet-A 3.4944 eV 354.81 nm f=1.2592 <S**2>=0.000
93 -> 95 0.51660
93 -> 96 0.15281
94 -> 95 0.12793
94 -> 96 -0.43278
Excited State 10: Singlet-A 3.4944 eV 354.81 nm f=1.2592 <S**2>=0.000
93 -> 95 -0.15280
93 -> 96 0.51662
94 -> 95 0.43276
94 -> 96 0.12794
3 对特定激发态振动分析:%chk=NiP_ES_B.chk %oldchk=NiP_TD_CAM.chk #p freq=savenormalmodes TD=(nstates=20,root=9) CAM-B3LYP/6-31+G* scrf(solvent=dichloromethane) geom=allcheck guess=read
这一步输出的激发态信息如下,很明显第3步输出的第9个激发态和第2步输出的激发态信息对不上(振子强度),第2步的9、10和第3步7、8吻合,第3步并没有优化,不存在势能面交叉。
Excitation energies and oscillator strengths:
Excited State 1: Singlet-A 1.6132 eV 768.58 nm f=0.0000 <S**2>=0.000
90 -> 97 0.72135
90 <- 97 -0.17969
Excited State 2: Singlet-A 1.8590 eV 666.93 nm f=0.0000 <S**2>=0.000
84 -> 97 0.43808
85 -> 97 0.16703
92 -> 97 0.53664
Excited State 3: Singlet-A 1.8590 eV 666.93 nm f=0.0000 <S**2>=0.000
84 -> 97 -0.16703
85 -> 97 0.43808
91 -> 97 0.53664
Excited State 4: Singlet-A 2.4557 eV 504.88 nm f=0.0352 <S**2>=0.000
93 -> 96 -0.42457
94 -> 95 0.54428
94 -> 96 -0.11724
Excited State 5: Singlet-A 2.4557 eV 504.88 nm f=0.0352 <S**2>=0.000
93 -> 95 0.42460
94 -> 95 0.11725
94 -> 96 0.54425
Excited State 6: Singlet-A 2.5476 eV 486.67 nm f=0.0000 <S**2>=0.000
75 -> 97 -0.16966
83 -> 97 -0.68072
Excited State 7: Singlet-A 3.2709 eV 379.05 nm f=1.6415 <S**2>=0.000
93 -> 95 0.54767
94 -> 96 -0.42975
Excited State 8: Singlet-A 3.2709 eV 379.05 nm f=1.6416 <S**2>=0.000
93 -> 96 0.54771
94 -> 95 0.42973
Excited State 9: Singlet-A 3.2771 eV 378.33 nm f=0.0001 <S**2>=0.000
88 -> 97 -0.13906
93 -> 97 0.69072
This state for optimization and/or second-order correction.
Total Energy, E(TD-HF/TD-DFT) = -2496.08131393
Copying the excited state density for this state as the 1-particle RhoCI density.
Excited State 10: Singlet-A 3.4006 eV 364.60 nm f=0.0000 <S**2>=0.000
94 -> 97 0.70641
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