计算的为半导体吸附团簇模型,in文件如下:
&CONTROL calculation= "relax", restart_mode='from_scratch' prefix= "cds", pseudo_dir= "/vol6/home/zhang00/pseudo1", outdir= "./", / &SYSTEM ibrav=0,celldm(1)=7.552000,nat=52,ntyp=4, ecutwfc=40,ecutrho=400, / &ELECTRONS conv_thr= 1.D-6, mixing_beta= 0.3, / &IONS ion_dynamics='bfgs', bfgs_ndim=1 / ATOMIC_SPECIES O 16.00 O.pbe-n-rrkjus_psl.0.1.UPF S 32.00 S.pbe-n-rrkjus_psl.0.1.UPF Ti 48.00 Ti.pbe-sp-van_ak.UPF Cd 112.40 Cd.pbe-n-van.UPF ATOMIC_POSITIONS crystal O 0.000000 0.000000 0.000000 O 0.250000 0.250000 0.264805 。。。此处省略 K_POINTS automatic 2 2 1 0 0 0 CELL_PARAMETERS angstrom 7.5520000 0.0000000 0.0000000 0.0000000 7.5520000 0.0000000 0.0000000 0.0000000 17.9113240 输出文件如下:
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